 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| AOD4136 TM N-Channel SDMOS POWER Transistor General Description The AOD4136 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge. The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for both DC-DC and load switch applications. -RoHS Compliant -Halogen Free* TO-252 D-PAK Features VDS (V) = 25V ID = 25A (VGS = 10V) RDS(ON) < 11m (VGS = 10V) RDS(ON) <19m (VGS = 4.5V) 100% UIS Tested! 100% Rg Tested! Top View D Bottom View D G S G S G S Absolute Maximum Ratings TA=25 unless otherwise noted C Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current B,H Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25 C Power Dissipation Power Dissipation B C C Maximum 25 20 25 20 100 17 15 30 15 2.1 1.3 -55 to 175 Units V V VGS C TC=25 TC=100 C ID IDM IAR EAR PD PDSM TJ, TSTG A mJ TC=100 C TA=25 C C TA=70 W A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G A,G Maximum Junction-to-Ambient Maximum Junction-to-Case F C Symbol t 10s Steady-State Steady-State RJA RJC Typ 17.4 50 4 Max 25 60 5 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD4136 Electrical Characteristics (TJ=25 unless otherwise noted) C Symbol Parameter Conditions ID=250A, VGS=0V VDS=25V, VGS=0V TJ=55 C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=15A Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V TJ=125 C 1.5 100 9 13 15 32 0.71 1 20 734 VGS=0V, VDS=12.5V, f=1MHz VGS=0V, VDS=0V, f=1MHz 2.4 174 97 3.6 12.9 VGS=10V, VDS=12.5V, ID=20A 6.2 2.2 4 6 VGS=10V, VDS=12.5V, RL=0.5, RGEN=3 IF=20A, dI/dt=300A/s 11.2 19.6 9.6 12 11 16 5.4 16.8 8.1 11 16 19 S V A pF pF pF nC nC nC nC ns ns ns ns ns nC m 1.9 Min 25 10 100 100 2.5 Typ Max Units V A nA V A STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg (10V) Total Gate Charge Qg (4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=300A/s A: The value of RJA is measured with the device in a still air environment with T A =25 The power dissipation P DSM and current rating IDSM C. are based on TJ(MAX)=150 using t 10s junction-to-ambient thermal resistance. C, B. The power dissipation PD is based on TJ(MAX)=175 using junction-to-case thermal resistance, and is more useful in setting the upper C, dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175 C. D. The RJA is the sum of the thermal impedence from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the deviceTBD mounted to a large heatsink, assuming C. a maximum junction temperature of TJ(MAX)=175 The SOA curve provides a single pulse ratin g. TBD G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25 C. H. The maximum current rating is limited by bond-wires. *This device is guaranteed green after data code 8X11 (Sep 1ST 2008). Rev1: Oct 2008 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD4136 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 10V 80 6.0V 4.5V ID(A) 50 40 30 20 VGS=3.5V 10 25C 0 0 1 2 3 4 5 VDS (Volts) Figure 1: On-Region Characteristics 0 1 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics 60 VDS=5V ID (A) 60 40 20 4.0V 100 125C 18 16 RDS(ON) (m ) 14 12 10 8 6 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=10V VGS=4.5V Normalized On-Resistance 1.6 VGS=10V ID=20A VGS=4.5V ID=15A 1.4 1.2 1 0.8 25 50 75 100 125 150 175 200 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 100 ID=20A 40 35 30 RDS(ON) (m ) 25 20 15 10 5 3 4 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C IS (A) 150 10 1 0.1 0.01 25C 0.001 0.0001 0.00001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 125C mJ Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD4136 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 VDS=12.5V ID=20A Capacitance (pF) 1200 1000 800 600 400 200 0 0 3 6 9 12 15 0 Qg (nC) Figure 7: Gate-Charge Characteristics Crss 5 10 15 20 25 Ciss 8 VGS (Volts) 6 4 100 Coss 2 0 VDS (Volts) Figure 8: Capacitance Characteristics 1000 RDS(ON) limited 100 ID (Amps) 10s Power (W) 10000 TJ(Max)=175C TC=25C 1000 10 100s 1ms 10ms 100ms 100 1 TJ(Max)=175C TC=25C 0.1 1 VDS (Volts) DC 0.1 10 100 10 0.00001 0.0001 0.001 0.01 0.1 1 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) 10 Z Jc Normalized Transient Thermal Resistance D=Ton/T TJ,PK=Tc+PDM.ZJC.RJC RJC=5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 150 mJ 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD4136 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 35 30 Power Dissipation (W) 25 20 15 10 5 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 12: Power De-rating (Note B) Current rating ID(A) 30 25 20 15 10 5 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Current De-rating (Note B) 100 1000 TJ(Max)=150C TA=25C Power (W) 100 10 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G) 10 Z JA Normalized Transient Thermal Resistance In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 150 0.1 PD 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=60C/W 0.01 0.1 1 Ton T 100 1000 10 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note G) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD4136 Gate Charge Test Circuit & Waveform Vgs Qg + VDC 10V VDC DUT Vgs Ig + Vds - Qgs Qgd Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs Rg DUT VDC + Vdd Vgs td(on) tr ton td(off) toff tf 90% 10% Vgs Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L Vds Id Vgs Rg DUT Vgs Vgs Vgs Vds EAR= 1/2 LIAR 2 BVDSS VDC + Vdd Id I AR Diode Recovery Test Circuit & Waveforms Vds + DUT Vgs t rr Q rr = - Idt Vds - Isd Vgs L Isd IF dI/dt I RM Vdd VDC + Vdd Vds Ig Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
Price & Availability of AOD4136
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |